| PART |
Description |
Maker |
| BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
| BC817-16W Q62702-C2320 Q62702-C2323 Q62702-C2324 Q |
RES FIX, 324 OHM.125W 1% SMDA 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Silicon AF Transistor (For general AF applications High collector current High current gain) 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BCW66G BCW65A BCW66F BCW65 Q62702-C1892 BCW65B BCW |
NPN Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CA3251 CA3250 |
GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAYS
|
General Electric Solid State
ETC
List of Unclassifed Manufacturers
|
| BC618 BC617 Q62702-C1138 Q62702-C1137 |
From old datasheet system
NPN Silicon Darlington Transistors (High current gain High collector current) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| Q62702-C2134 BCP28 BCP48 Q62702-C2135 |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KTC3211 |
General Purpose Transistor
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| BCX69-10 BCX69-16 |
For general AF applications. High collector current. High current gain.
|
TY Semiconductor Co., Ltd
|
| HL9-100KWTQ HL9-101KWTQ HL9-102KWTQ HL9-1R0KWTQ HL |
1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR
HIGH CURRENT POWER CHOKES
1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 56000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 270 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR
|
RCD COMPONENTS INC.
|
| KTC8050 KTC802E |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE/ SWITCHING)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| BCP69-10 BCP69 BCP69-16 BCP69-25 Q62702-C2133 Q627 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| 2SC3303 E000823 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCING APPLICATIONS)
HIGH CURRENT SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
